The Memory Bottleneck has become a significant issue in modern Systems-on-a-Chip (SoC), with on-chip embedded memory now occupying up to 75% of the total SoC area. Standard SRAM technology is inefficient in terms of area and faces major scaling challenges beyond 10nm.

RAAAM’s Gain-Cell Random Access Memory (GCRAM) technology offers a unique solution, using only 2-3 transistors per bit compared to SRAM’s 6-8 transistors. This makes GCRAM more area-efficient, cost-effective, and manufacturable with standard CMOS processes. After successful testing in nodes ranging from 180nm to 16nm, RAAAM is now focused on developing, fabricating, and characterizing this memory technology for nodes ≤5nm and fully qualifying it for production according to industry standards.